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參數(shù)資料
| 型號(hào)： | 2SK2212-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 934K |
| 代理商： | 2SK2212-E |
2SK2212
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
40
30
20
10
0
50
100
150
200
0.5
50
20
10
2
5
1
0.2
0.5
0.1
0.05
1
2
5
10 20
50 100 200 500
1 ms
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
DC
Operation
(Tc
=
25
°C)
100
s
Ta = 25
°C
10
s
20
16
12
8
4
0
4 V
5 V
10 V
4
8
12
16
20
4.5 V
VGS = 3.5 V
5.5 V
6 V
10
8
6
4
2
0
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
2
4
6
8
10
5
4
3
2
1
0
Pulse Test
48
12
16
20
ID = 10 A
2 A
5 A
10
2
5
1
0.1
0.2
0.5
1
2
5
10
20
50
VGS = 10 V
15 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2213-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2213-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2213-01S | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2215-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2215-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
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