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參數(shù)資料
| 型號(hào)： | 2SK2141 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 237K |
| 代理商： | 2SK2141 |
2SK2141
3
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
100
TC - Case Temperature - °C
dT
-
Percentage
of
Rated
Power
-
%
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
100
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
416
812
2
80
0
40
1.0
10
0.1
60
20
60
40
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
TC - Case Temperature - °C
P
T
-
Total
Power
Dissipation
-
W
80
0
40
60
20
60
40
80
100
120
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
510
100
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
5.0
10
1.0
6
12
8
4
0
Pulsed
1.0
TC = 25 °C
Single Pulse
RDS
(on)
Limited
(at
V
GS
=
20
V)
0
100
s
1 ms
10
ms
PW
=
10
s
Power
Dissipation
Limited
ID (pulse)
200
ms
10
20
12 V
10 V
8 V
VGS = 6 V
50
VDS = 10 V
Pulsed
Tch = 125 °C
75 °C
25 °C
–25 °C
ID (DC)
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| 2SK2152 | 2 A, 20 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2142 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-220AB |
| 2SK2144 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2145 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK2145_07 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK2145BL | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 6MA I(DSS) | SOT-353 |
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