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參數(shù)資料
| 型號(hào)： | 2SK2141 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 237K |
| 代理商： | 2SK2141 |
2SK2141
2
Test Circuit 1: Avalanche Capability
Test Circuit 2: Switching Time
Test Circuit 3: Gate Charge
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)
0.8
1.1
VGS = 10 V, ID = 3.0 A
Gate to Source Cutoff Voltage
VGS(off)
2.5
3.5
V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
yfs
2.0
S
VDS = 10 V, ID = 3.0 A
Drain Leakage Current
IDSS
100
A
VDS = 600V, VGS = 0
Gate to Source Leakage Current
IGSS
±100
nA
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
1150
pF
VDS = 10 V
Output Capacitance
Coss
260
pF
VGS = 0
Reverse Transfer Capacitance
Crss
60
pF
f = 1 MHz
Turn-On Delay Time
td(on)
15
ns
VGS = 10 V
Rise Time
tr
15
ns
VDD = 150 V
Turn-Off Delay Time
td(off)
75
ns
ID = 3.0 A, RG = 10
Fall Time
tf
13
ns
RL = 37.5
Total Gate Charge
QG
40
nC
VGS = 10 V
Gate to Source Charge
QGS
6.0
nC
ID = 6.0 A
Gate to Drain Charge
QGD
20
nC
VDD = 480 V
Diode Forward Voltage
VF(S-D)
1.0
V
IF = 6.0 A, VGS = 0
Reverse Recovery Time
trr
370
ns
IF = 6.0 A
Reverse Recovery Charge
Qrr
1.5
C
di/dt = 50 A/
s
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
PG.
RG = 10
D.U.T.
RL
VDD
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave
Form
ID
Wave
Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td(on)
tr
td (off)
tf
τ
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| 2SK2142 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-220AB |
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