參數(shù)資料
型號: 2SK2112
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場效應(yīng)晶體管的高速開關(guān)
文件頁數(shù): 2/6頁
文件大?。?/td> 59K
代理商: 2SK2112
2SK2112
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= 100 V, V
GS
= 0
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
10
μ
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
0.8
1.5
2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 0.5 A
0.4
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 4.0 V, I
D
=0.5 A
0.58
1.2
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 0.5 A
0.50
0.8
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0,
f = 1.0 MHz
178
pF
Output Capacitance
C
oss
59
pF
Reverse Transfer Capacitance
C
rss
16
pF
Turn-On Delay Time
t
d(on)
V
DD
= 25 V, I
D
= 0.5 A
V
GS(on)
= 10 V, R
G
= 10
2.9
ns
Rise Time
t
r
1.7
ns
Turn-Off Delay Time
t
d(off)
R
L
= 50
60
ns
Fall Time
t
f
15
ns
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