參數(shù)資料
型號: 2SK2110
元件分類: 小信號晶體管
英文描述: 500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 6/7頁
文件大小: 225K
代理商: 2SK2110
Data Sheet D11230EJ3V0DS
4
2SK2110
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.5
0.5
0.01
0.1
1
10
ID - Drain Current - A
SWITCHING CHARACTERISTICS
50
10
0.05
0.2
1
5
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1.5
1
0
5
10
20
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
Ω
ID = 0.3 A
25C
–25C
0
VGS = 10 V
15
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
500
50
0.1
0.5
10
100
VDS - Drain to Source Voltage - V
VGS = 0 V
f = 1.0 MHz
20
50
0.2
1
2
5
200
100
20
10
Ciss
Crss
20
2
5
0.1
0.5
2
VDD = 25 V
VGS = 10 V
td(on)
tf
ISD
-
Diode
Forward
Current
-
A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1
0.01
0.2
0.4
0.7
1
VSD - Source to Drain Voltage - V
0.8
0.9
0.3
0.5
0.6
0.1
0.001
0.0001
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
Ω
TA = 75C
0.5
1
5
tr
td(off)
Coss
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SK2111-T1-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,1.0A,0.32ohm,P-MINI MOLD3 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 1A 4-Pin(3+Tab) SC-62 T/R
2SK2112 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor
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