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參數(shù)資料
| 型號(hào)： | 2SK2110 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 225K |
| 代理商： | 2SK2110 |
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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK2110
N-CHANNEL MOSFET
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D11230EJ3V0DS00 (3rd edition)
Date Published December 2005 NS CP(K)
Printed in Japan
c
1996
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK2110 is a N-channel MOSFET of a vertical type
and is a switching element that can be directly driven by the
output of an IC operating at 5 V.
This product has a low on-state resistance and superb
switching characteristics and is ideal for driving the actuators,
such as motors and DC/DC converters.
FEATURES
Low on-state resistance
RDS(on) = 1.5
Ω MAX. (VGS = 4.0 V, ID = 0.3 A)
High switching speed
ton + toff < 100 ns
Low parasitic capacitance
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2110
SC-62 (Power Mini Mold)
Marking: NT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±0.5
A
Drain Current (pulse)
Note1
ID(pulse)
±1.0
A
Total Power Dissipation
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic substrate of 16 cm
2 x 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.6 ±0.2
1.5 ±0.1
0.8
MIN.
2.5
±0.1
4.0
±0.25
3.0 TYP.
1.5 TYP.
4.5 ±0.1
0.41
+0.03
–0.05
0.47
±0.06
0.42
±0.06
0.42
±0.06
1. Source
2. Drain
3. Gate
13
2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
<R>
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2110(T1-AZ) | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 0.5A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2111 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK2111-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,1.0A,0.32ohm,P-MINI MOLD3 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 1A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2112 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK2112-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
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