參數(shù)資料
型號: 2SK2053
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場效應(yīng)晶體管的高速開關(guān)
文件頁數(shù): 4/6頁
文件大?。?/td> 62K
代理商: 2SK2053
2SK2053
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
0.01
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
0.01
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
0.5
0.4
0.3
0.2
0.1
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
S
0.2
10
1
0.1
0.01
0.001
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
i
,
r
,
o
1
1 000
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d
,
r
,
d
,
f
0.1
1 000
I
D
- Drain Current - A
0.03
0.1
0.3
1
3
10
T
A
= 75 C
25 C
–25 C
V
GS
= 2.5 V
0.03
0.1
0.3
1
3
10
T
A
= 75 C
25 C
–25 C
V
GS
= 4.0 V
2
4
6
t
r
5 A
0.4
0.6
0.8
1.0
1.2
500
200
100
50
20
10
2
5
10
20
50
100
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
500
200
100
50
20
10
0.2
0.5
1
2
5
10
V
DD
= 3 V
V
GS(on)
= 3 V
t
f
t
d(off)
t
d(on)
I
D
= 1 A, 2.5 A
相關(guān)PDF資料
PDF描述
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