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參數(shù)資料
| 型號： | 2SK1831 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SK1831 |
2SK1831, 2SK1832
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source
K1831
V
(BR)DSS
450
—
—
V
I
D
= 10 mA, V
GS
= 0
breakdown
voltage
K1832
500
—
—
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
Zero gate
K1831
—
—
250
voltage drain
current
K1832
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
2.0
—
3.0
V
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A
V
GS
= 10 V*
1
Static drain to
K1831
—
0.6
0.8
source on state
resistance
K1832
—
0.7
0.9
Forward transfer admittance
|y
fs
|
4.0
7.0
—
S
I
D
= 5 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Input capacitance
Ciss
—
1050
—
pF
Output capacitance
Coss
—
280
—
pF
Reverse transfer capacitance
Crss
—
40
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
15
—
ns
I
D
= 5 A
V
GS
= 10 V
R
L
= 6
Rise time
—
60
—
ns
Turn-off delay time
—
90
—
ns
Fall time
—
45
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 10 A, V
GS
= 0
Body to drain diode reverse
recovery time
Notes
1. Pulse Test
t
rr
—
350
—
ns
I
F
= 10 A, V
= 0,
di
F
/ dt = 100 A /
μ
s
See characteristic curves of 2SK1157, 2SK1158
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