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參數(shù)資料
| 型號： | 2SK1824 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FET FOR SWITCHING |
| 中文描述： | N溝道場效應(yīng)晶體管的開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SK1824 |
2SK1824
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= 30 V, V
GS
= 0
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
5 V, V
DS
= 0
±
0.1
±
3
μ
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= 3 V, I
D
= 10
μ
A
0.8
1.0
1.5
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 3 V, I
D
= 10 mA
20
50
mS
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 2.5 V, I
D
= 1 mA
7
13
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 4.0 V, I
D
= 10 mA
5
8
Input Capacitance
C
iss
V
DS
= 5.0 V, V
GS
= 0, f = 1 MHz
16
pF
Output Capacitance
C
oss
14
pF
Reverse Transfer Capacitance
C
rss
2
pF
Turn-On Delay Time
t
d(on)
V
DD
= 5V, I
D
= 10 mA
V
GS(on)
= 5 V, R
G
= 10
15
ns
Rise Time
t
r
20
ns
Turn-Off Delay Time
t
d(off)
R
L
= 500
100
ns
Fall Time
t
f
100
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
R
G
PG.
DUT
V
in
τ
= 1 s
Duty cycle
≤
1 %
τ
R
L
V
DD
Gate
Voltage
Waveform
Drain
Current
Waveform
V
GS
I
D
0
0
10 %
10 %
t
d(on)
t
d(off)
t
on
t
off
t
r
t
f
10 %
90 %
90 %
90 %
I
D
V
GS(on)
0
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參數(shù)描述 |
|---|---|
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