- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370105 > 2SK1824 (NEC Corp.) N-CHANNEL MOS FET FOR SWITCHING PDF資料下載
參數(shù)資料
| 型號： | 2SK1824 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FET FOR SWITCHING |
| 中文描述： | N溝道場效應(yīng)晶體管的開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SK1824 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1824
N-CHANNEL MOS FET
FOR SWITCHING
Document No. D11220EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
0.3 ± 0.05
1
0
G
0.2
+0.1
–0
0.5
0.5
1.0
1.6 ± 0.1
D
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: B1
The 2SK1824 is a N-channel vertical type MOS FET that is
driven at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SK1824 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
Moreover, the 2SK1824 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
Can be automatically mounted
Can be directly driven by 3-V IC
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
30
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
7
V
Drain Current (DC)
I
D(DC)
±
100
mA
Drain Current (Pulse)
I
D(pulse)
PW
≤
10 ms
Duty cycle
≤
50 %
±
200
mA
Total Power Dissipation
P
T
3.0 cm
2
×
0.64 mm, ceramic substrate used
200
mW
Channel Temperature
T
ch
150
C
Operating Temperature
T
opt
–55 to +80
C
Storage Temperature
T
stg
–55 to +150
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1832 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1835 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1836 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1837 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1838 | Silicon N-Channel MOS FET(N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1824-T1-A | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 8 SC75 Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SK1825(F) | 制造商:Toshiba 功能描述:Nch 50V 50mA 20@4V MINI Bulk |
| 2SK1827(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR |
| 2SK1828(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 0.05A 3-Pin SMini T/R Tape & Reel 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 0.05A 3-Pin S-Mini T/R |
| 2SK1828(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 20V 0.05A 3-Pin S-Mini T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。