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參數(shù)資料
| 型號： | 2SK1772HYTR-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SK1772HYTR-E |
2SK1772
Rev.2.00 Sep 07, 2005 page 4 of 6
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
Case Temperature
TC (°C)
Pulse test
1 A
2 A
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(
)
0
VGS = 10 V
VGS = 4 V
I = 0.5 A, 1 A
D
2 A
0.5 A
Static Drain to Source on State
Resistance vs. Temperature
5.0
2.0
1.0
0.5
0.2
0.1
0.05
Forward
Transfer
Admittance
|y
fs
|
(S)
0.02
0.05
0.1
0.2
0.5
1.0
2.0
Drain Current
ID
(A)
75
°C
–25
°C
Tc = 25
°C
VDS = 10 V
Pulse test
Forward Transfer Admittance vs.
Drain Current
500
200
100
50
20
10
5
Reverse
Recovery
Time
t
rr
(ns)
0.02
0.05
0.1
0.2
0.5
1.0
2.0
Reverse Drain Current
IDR
(A)
di/dt = 50 A/
s
VGS = 0
Ta = 25
°C
Body-Drain Diode Reverse
Recovery Time
1000
100
10
1
010
20
30
40
50
Drain to Source Voltage
VDS
(V)
Capacitance
C
(pF)
Coss
Ciss
Crss
VGS= 0
f = 1 MHz
Typical Capacitance vs. Drain to
Source Voltage
50
40
30
20
10
0
0.8
1.6
2.4
3.2
4.0
Gate Charge
Qg
(nc)
Drain
to
Source
Voltage
V
DS
(V)
ID = 1 A
VGS
VDS
VDD = 5 V
10 V
20 V
VDD = 5 V
10 V
20 V
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
500
200
100
50
20
10
5
Switching
Time
t
(ns)
0.02
0.05
0.1
0.2
0.5
1.0
2.0
Drain Current
ID
(A)
tr
tf
td(off)
VGS = 10 V
VDD = 30 V
PW = 2
s
duty 1 %
td(on)
Switching Characteristics
≤
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