- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33483 > 2SK1772HYTR-E 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK1772HYTR-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SK1772HYTR-E |
2SK1772
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
1
A
Drain peak current
ID(pulse)
*1
2
A
Body to drain diode reverse drain current
IDR
1
A
Channel dissipation
Pch
*2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5
× 20 × 0.7mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
50
A
VDS = 25 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
—
0.4
0.6
ID = 0.5 A, VGS = 10 V*
3
Static drain to source on state
resistance
RDS(on)
—
0.6
0.85
ID = 0.5 A, VGS = 4 V*
3
Forward transfer admittance
|yfs|
0.6
1.0
—
S
ID = 0.5 A, VDS = 10 V*
3
Input capacitance
Ciss
—
85
—
pF
Output capacitance
Coss
—
65
—
pF
Reverse transfer capacitance
Crss
—
20
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
10
—
ns
Rise time
tr
—
15
—
ns
Turn-off delay time
td(off)
—
40
—
ns
Fall time
tf
—
30
—
ns
ID = 0.5 A, VGS = 10 V,
RL = 60
*3
Body to drain diode forward voltage
VDF
—
1.2
—
V
IF = 1 A, VGS = 0*
3
Body to drain diode reverse
recovery time
trr
—
30
—
ns
IF = 1 A, VGS = 0,
diF/dt = 50 A/
s*3
Note:
3. Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1775 | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1775 | 1.6 ohm, POWER, FET |
| 2SK1784 | 12 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1793 | 3 A, 900 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1794 | 6 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1773-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 1KV 5A 3-Pin(3+Tab) TO-3P Cut Tape |
| 2SK1775-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 8A TO-3P |
| 2SK177T1 | 制造商:NEC 功能描述:New |
| 2SK1807-E | 制造商:Renesas Electronics Corporation 功能描述:900V NCHANEL MOSFET |
| 2SK1808(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220FM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。