參數(shù)資料
型號: 2SK1772
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 6/9頁
文件大?。?/td> 40K
代理商: 2SK1772
2SK1772
6
500
200
100
50
20
10
5
0.02
R
0.05
0.1
0.2
0.5
1.0
2.0
Reverse Drain Current I (A)
di/dt = 50 A/μs
V = 0
Ta = 25°C
Body-Drain Diode Reverse
Recovery Time
r
1000
100
10
1
0
10
20
30
40
50
Drain to Source Voltage V (V)
C
Coss
Ciss
Crss
V = 0
f = 1 MHz
Typical Capacitance vs. Drain to
Source Voltage
50
40
30
20
10
0
0.8
Gate Charge Qg (nc)
1.6
2.4
3.2
4.0
D
D
I = 1 A
V
GS
V
DS
V = 5 V
10 V
20 V
V = 5 V
10V
20 V
20
16
12
8
4
0
G
G
Dynamic Input Characteristics
500
200
100
50
20
10
5
0.02
S
0.05
Drain Current I (A)
0.1
0.2
0.5
1.0
2.0
tr
tf
td(off)
V = 10 V
V = 30 V
PW = 2 μs
duty 1 %
td(on)
Switching Characteristics
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