參數(shù)資料
型號: 2SK176
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 4/9頁
文件大?。?/td> 45K
代理商: 2SK176
2SK1761
4
160
120
80
40
0
C
50
Case Temperature Tc (°C)
100
150
200
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
1
3
10
30
100
300
1000
0.1
0.3
1
3
10
30
100
100μs
PW=10ms(1sho)
10μ
Operation in this area
is limited by R (on)
DS
1ms
Ta = 25°C
DCOpeaion(T =25C
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
0
4
8
12
16
20
4
8
12
16
20
D
Pulse Test
5.5 V
5 V
4.5 V
10 V
6 V
V = 4 V
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Tc = 75°C
25°C
– 25°C
V = 10 V
Pulse Test
0
2
4
6
8
10
2
4
6
8
10
Typical Transfer Characteristics
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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