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參數(shù)資料
| 型號(hào)： | 2SK1764KYTL-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 0K |
| 代理商： | 2SK1764KYTL-E |
2SK1764
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
2
A
Drain peak current
ID(pulse)
*1
4
A
Body to drain diode reverse drain current
IDR
2
A
Channel power dissipation
Pch*2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 100 s, duty cycle ≤ 10 %
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source cutoff voltage
VGS(off)
1
—
2
V
VDS = 10 V, ID = 1 mA
Drain to source cutoff current
IDSS
—
10
A
VDS = 50 V, VGS = 0
Gate to source cutoff current
IGSS
—
±5
A
VGS =
±15 V, VDS = 0
Static drain to source on state
resistance
RDS(on)1
—
0.3
0.45
VGS = 10 V, ID = 1 A*
3
Static drain to source on state
resistance
RDS(on)2
—
0.4
0.60
VGS = 4 V, ID = 1 A*
3
Forward transfer admittance
|yfs|
0.9
1.7
—
S
VDS = 10 V, ID = 1 A*
3
Input capacitance
Ciss
—
140
—
pF
Output capacitance
Coss
—
75
—
pF
Reverse transfer capacitance
Crss
—
20
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn on time
ton
—
18
—
ns
Turn off time
toff
—
80
—
VDS = 10 V, ID = 1 A*
3,
RL = 30
Note:
3. Pulse Test
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