參數(shù)資料
型號(hào): 2SK1761
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 53K
代理商: 2SK1761
2SK1761
6
Reverse Drain Current I (A)
R
0.2
0.5
1
2
5
10
20
5
10
200
100
500
50
di / dt = 100 A / s
V = 0, Ta = 25°C
GS
20
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage V (V)
C
DS
0
10
20
30
40
50
10
100
1000
10000
V = 0
f = 1 MHz
Ciss
Coss
Crss
Typical Capacitance vs. Drain
to Source Voltage
Gate Charge Qg (nc)
D
G
0
8
16
24
32
40
0
100
200
300
400
500
D
G
100 V
50 V
V
GS
V
DS
V = 200 V
DD
I = 12 A
D
V = 200 V
DD
100 V
50 V
20
16
12
8
4
0
Dynamic Input Characteristics
Drain Current I (A)
S
0.1
0.2
0.5
1
2
5
10
5
10
20
50
100
200
500
V = 10 V,V 30 V
PW = 2 s, duty 1 %
td (off)
tf
td (on)
tr
Switching Characteristics
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