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參數(shù)資料
| 型號： | 2SK1698 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SK1698 |
2SK1698
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
50AV
DS = 80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
3.5
4.5
I
D = 0.2 A, VGS = 10 V *
1
—
4.5
6.5
I
D = 0.2 A, VGS = 4 V *
1
Forward transfer admittance
|y
fs|
0.22
0.35
—
S
I
D = 0.2 A, VDS = 10 V *
1
Input capacitance
Ciss
—
35
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
14
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
3.5
—
pF
Turn-on delay time
t
d(on)
—2
—ns
I
D = 0.2 A, VGS = 10 V,
Rise time
t
r
—4
—ns
R
L = 150
Turn-off delay time
t
d(off)
—17
—
ns
Fall time
t
f
—15
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 0.3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
80
—
ns
I
F = 0.3 A, VGS = 0,
di
F/dt = 50 A/s
Note
1. Pulse test
See characteristic curve of 2SK1337.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK170 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK170BL | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR OR B1CAC |
| 2SK170BL(F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS JFET N-CH 12MA 3PIN TO-92 - Bulk |
| 2SK170-BL(F) | 制造商:Toshiba 功能描述:Nch -40V 6mA to 14mA TO92 Bulk |
| 2SK170BLF | 功能描述:JFET SMALL SIGNAL TRANS PB-F TO-92 JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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