參數(shù)資料
型號: 2SK170
元件分類: 小信號晶體管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
封裝: 2-5F1D, SC-43, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 180K
代理商: 2SK170
2SK170
2003-03-25
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK170
Low Noise Audio Amplifier Applications
Recommended for first stages of EQ and M.C. head amplifiers.
High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
High breakdown voltage: VGDS = 40 V
Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-40
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
2.6
20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.2
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
22
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
30
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
6
pF
NF (1)
VDS = 10 V, ID = 1.0 mA, RG = 1 kW,
f
= 1 kHz
1.0
10
Noise figure
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kW,
f
= 1 kHz
0.5
2
dB
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Unit: mm
JEDEC
TC-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
相關PDF資料
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