參數(shù)資料
型號: 2SK163
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 5/9頁
文件大?。?/td> 48K
代理商: 2SK163
2SK1636(L), 2SK1636(S)
5
10
4
10
Gate to Source Voltage V
GS
(V)
D
D
8
2
2
6
8
0
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
I
D
= 15 A
10 A
5 A
Pulse Test
5
100
Drain Current I
D
(A)
S
R
D
)
1
Static Drain to Source on State
Resistance vs. Drain Current
2
1
0.5
0.2
0.1
0.05
2
5
10
20
50
V
GS
= 10 V
Pulse Test
15 V
1.0
40
160
Case Temperature T
C
(°C)
S
R
D
)
0.8
0.2
0
80
120
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Temperature
–40
Pulse Test
V
GS
= 10 V
I
D
= 15 A
10 A
5 A
50
50
F
y
Forward Transfer Admittance
vs. Drain Current
0.5
20
10
5
2
1
0.5
Drain Current I
D
(A)
1
2
5
10
20
V
= 10 V
Pulse Test
T
C
= –25°C
25°C
75°C
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參數(shù)描述
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