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參數(shù)資料
| 型號(hào)： | 2SK1636L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 2SK1636L |
2SK1636(L), 2SK1636(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
250
μ
A
μ
A
V
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
2.0
—
3.0
Static Drain to source on state
resistance
—
0.22
0.27
1
Forward transfer admittance
|yfs|
6.0
10.0
—
S
I
D
= 8 A, V
DS
= 10 V *
V
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
—
1250
—
pF
Output capacitance
Coss
—
510
—
pF
Reverse transfer capacitance
Crss
—
85
—
pF
Turn-on delay time
t
d(on)
—
24
—
ns
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
Rise time
t
r
t
d(off)
t
f
V
DF
—
85
—
ns
Turn-off delay time
—
110
—
ns
Fall time
—
60
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 15 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
400
—
ns
I
F
= 15 A, V
= 0,
di
F
/dt = 100 A/
μ
s
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|---|---|
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| 2SK1647L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1647STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
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