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參數(shù)資料
| 型號： | 2SK1629-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SK1629-E |
2SK1628, 2SK1629
REJ03G0960-0400 Rev.4.00 May 13, 2009
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1628
450
Drain to source
breakdown voltage
2SK1629
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
2SK1628
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1629
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
2SK1628
—
0.20
0.25
Static drain to source on
state resistance
2SK1629
RDS(on)
—
0.22
0.27
ID = 15 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
12
20
—
S
ID = 15 A, VDS = 10 V *
3
Input capacitance
Ciss
—
2800
—
pF
Output capacitance
Coss
—
780
—
pF
Reverse transfer capacitance
Crss
—
90
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
32
—
ns
Rise time
tr
—
140
—
ns
Turn-off delay time
td(off)
—
200
—
ns
Fall time
tf
—
100
—
ns
ID = 15 A, VGS = 10 V,
RL = 2
Body to drain diode forward voltage
VDF
—
1.1
—
V
IF = 30 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
600
—
ns
IF = 30 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
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