參數(shù)資料
型號: 2SK1627
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 34K
代理商: 2SK1627
2SK1626, 2SK1627
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1626
V
DSS
450
V
2SK1627
500
Gate to source voltage
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
±
30
V
Drain current
5
A
Drain peak current
20
A
Body to drain diode reverse drain current
5
A
Channel dissipation
35
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note
1. PW
10
μ
s, duty cycle
1%
2. Value at T
C
= 25
°
C
Tstg
–55 to +150
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