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參數(shù)資料
| 型號(hào)： | 2SK1572-E |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | 2SK1572-E |
2SK1572
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
3
A
Drain peak current
ID(pulse)*
1
6
A
Body to drain diode reverse drain current
IDR
3
A
Channel dissipation
Pch*
2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
600
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
3.8
5.0
ID = 1 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
1.2
2.0
—
S
ID = 1 A, VDS = 10 V *
3
Input capacitance
Ciss
—
295
—
pF
Output capacitance
Coss
—
70
—
pF
Reverse transfer capacitance
Crss
—
12
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
8
—
ns
Rise time
tr
—
25
—
ns
Turn-off delay time
td(off)
—
65
—
ns
Fall time
tf
—
30
—
ns
ID = 1 A, VGS = 10 V,
RL = 30
Body to drain diode forward voltage
VDF
—
0.9
—
V
IF = 2 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
220
—
ns
IF = 2 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK1573 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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| 2SK1573-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1575 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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