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參數(shù)資料
| 型號(hào)： | 2SK1580 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 49K |
| 代理商： | 2SK1580 |
1991
MOS FIELD EFFECT TRANSISTOR
2SK1580
N-CHANNEL MOS FET
FOR SWITCHING
Document No. D13555EJ4V0DS00 (4th edition)
Date Published June 2001 NS CP (K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
PACKAGE DRAWING (Unit : mm)
1.25 ±0.1
2.1 ±0.1
D
0.3
+0.1
–0.05
0.3
+0.1 –0
G
S
2.0
±0.2
0.65
0.15
+0.1
–0.05
0
to
0.1
0.3
0.9
±0.1
Marking
DESCRIPTION
The 2SK1580 is an N -channel vertical type MOS FET which can be
driven by 2.5 V power supply.
As the MOS FET is driven by low voltage and does not require con-
sideration of driving current, it is suitable for appliance including VCR
cameras and headphone stereos which need power saving.
FEATURES
Directly driven by ICs having a 3 V power supply.
Not necessary to consider driving current because of its
high input impedance.
Possible to reduce the number of parts by omittng the bias resistor.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±16
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±100
mA
Drain Current (pulse)
Note1
ID(pulse)
±200
mA
Total Power Dissipation (TA = 25°C)
PT
150
mW
Channel Temperature
Tch
150
°C
Operating Temperature
Topt
55 to +80
°C
Storage Temperature
Tstg
55 to +150 °C
Note1. PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1580-A | 100 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1581-T1B | 200 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1581 | 200 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1581 | 200 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1582-A | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1580-T1-A | 制造商:Renesas Electronics 功能描述:Nch 16V 1A 10 SC70 Tape & Reel |
| 2SK1581 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1581-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1581-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 0.2A 3-Pin SC-59 T/R |
| 2SK1582 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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