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參數(shù)資料
| 型號(hào)： | 2SK1530O |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-21F1B, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 382K |
| 代理商： | 2SK1530O |
1997 Mar 25
3
Philips Semiconductors
Product specication
NPN general purpose transistor
2N4124
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
200
mA
ICM
peak collector current
300
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB =3V
50
nA
hFE
DC current gain
IC = 2 mA; VCE = 1 V; note 1
120
360
IC = 50 mA; VCE = 1 V; note 1
60
VCEsat
collector-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
300
mV
VBEsat
base-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
950
mV
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
4pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
8pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz
300
MHz
F
noise gure
IC = 100 A; VCE =5V; RS =1k
f = 10 Hz to 15.7 kHz
5dB
相關(guān)PDF資料 |
PDF描述 |
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| 2SK1530Y | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1572-E | 3 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1573-E | 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1530Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR |
| 2SK1530-Y | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
| 2SK1530-Y(F) | 功能描述:MOSFET MOSFET N-CH 200V 12A TO-3PL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK1530-YF | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
| 2SK1531 | 制造商:Toshiba 功能描述:Cut Tape 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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