參數(shù)資料
型號: 2SK1522-E
元件分類: JFETs
英文描述: 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PL, 3 PIN
文件頁數(shù): 5/6頁
文件大?。?/td> 117K
代理商: 2SK1522-E
2SK1521, 2SK1522
REJ03G0949-0300 Rev.3.00 May 13, 2009
Page 3 of 6
Main Characteristics
300
200
100
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
1
300
100
30
10
3
1
0.3
0.1
3
10
30
100
300
100
s
1 ms
DC
Operation
(T
C =
25
°C)
PW
=
10
ms
(1
Shot)
10
s
Ta = 25
°C
Operation
in
this
area
is limited
by
R DS
(on)
2SK1521
2SK1522
100
820
Drain to Source Voltage VDS (V)
Typical Output Characteristics
80
20
412
16
0
40
60
Drain
Current
I
D
(A)
Pulse Test
VGS = 4 V
8 V
10 V
6 V
5.5 V
5 V
4.5 V
100
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
80
20
26
8
0
40
60
VDS = 20 V
Pulse Test
TC = 75°C
–25
°C
25
°C
5
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
4
1
412
16
0
2
3
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
ID = 10 A
20 A
50 A
1
500
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
5
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
0.1
0.05
0.02
0.01
10
20
50
100 200
VGS = 10, 15 V
Pulse Test
相關PDF資料
PDF描述
2SK1523 10 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1525-4100 20 A, 500 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1693-4100 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2SK1249-4100 15 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1694-4100 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
2SK1523 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-220VAR
2SK1524 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-220VAR
2SK1525 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK1526 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET