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參數(shù)資料
| 型號： | 2SK1522-E |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2SK1522-E |
2SK1521, 2SK1522
REJ03G0949-0300 Rev.3.00 May 13, 2009
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1521
450
Drain to source
breakdown voltage
2SK1522
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
2SK1521
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1522
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
2SK1521
—
0.08
0.10
Static drain to source on
state resistance
2SK1522
RDS(on)
—
0.085
0.11
ID = 25 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
22
35
—
S
ID = 25 A, VDS = 10 V *
3
Input capacitance
Ciss
—
8700
—
pF
Output capacitance
Coss
—
2400
—
pF
Reverse transfer capacitance
Crss
—
235
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
85
—
ns
Rise time
tr
—
250
—
ns
Turn-off delay time
td(off)
—
600
—
ns
Fall time
tf
—
250
—
ns
ID = 25 A, VGS = 10 V,
RL = 1.2
Body to drain diode forward voltage
VDF
—
1.1
—
V
IF = 50 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
120
—
ns
IF = 50 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1523 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-220VAR |
| 2SK1524 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-220VAR |
| 2SK1525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1526 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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