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參數(shù)資料
| 型號(hào)： | 2SK1520-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | 2SK1520-E |
2SK1519, 2SK1520
REJ03G0948-0400 Rev.4.00 May 13, 2009
Page 4 of 6
0.5
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
0.4
0.1
0
80
120
0
0.2
0.3
Static Drain to Source on State
Resistance vs. Temperature
ID = 50 A
VGS = 10 V
Pulse Test
–40
20 A
10 A
100
150
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
50
5
0.5
2
10
1
10
20
Forward Transfer Admittance
vs. Drain Current
VDS = 10 V
Pulse Test
2
520
75
°C
25
°C
TC = –25°C
500
10
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
200
20
1
50
100
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, V
GS = 0
Pulse Test
10
0.5
2
20
50
5
1,000
10,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
100
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
10
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
1,000
160
400
Gate Charge Qg (nC)
Drain
to
Source
Voltage
V
DS
(V)
800
80
240
0
320
600
400
200
ID = 30 A
Pulse Test
VDD = 400 V
Dynamic Input Characteristics
250 V
VGS
20
Gate
to
Source
Voltage
V
GS
(V)
16
12
8
4
0
VDS
100 V
VDD = 100 V
250 V
400 V
1,000
250
Drain Current ID (A)
Switching
Time
t
(ns)
500
50
15
20
10
100
200
0.5
20
10
Switching Characteristics
tf
td (off)
tr
VGS = 10 V, PW = 2 s
duty < 1%, VDD 30 V
=
.
td (on)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1521 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 50A 3PIN TO-3PL - Rail/Tube |
| 2SK1521(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1521-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1522 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 500V 50A 3PIN TO-3PL - Rail/Tube |
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