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參數(shù)資料
| 型號： | 2SK1520-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SK1520-E |
2SK1519, 2SK1520
REJ03G0948-0400 Rev.4.00 May 13, 2009
Page 3 of 6
Main Characteristics
300
200
100
0
50
100
150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
1,000
30
3
0.1
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
300
0.3
1
3
30
300
Ta = 25
°C
10
s
100
s
DC
Operation
(T
C = 25
°C)
1 ms
PW
=
10
ms
(1
Shot)
100
10
1
Operation
in
this
area
is limited
by
R DS
(on)
2SK1520
2SK1519
50
820
Drain to Source Voltage VDS (V)
Typical Output Characteristics
40
10
4
12
16
Pulse Test
0
20
30
4.5 V
VGS = 4 V
Drain
Current
I
D
(A)
5 V
6 V
10 V
50
4
10
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
40
10
26
8
–25
°C
0
20
30
VDS = 10 V
Pulse Test
25
°C
TC = 75°C
10
410
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
26
8
0
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20 A
ID = 50 A
Pulse Test
10 A
5
200
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2
0.1
5
20
100
2
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
50
VGS = 10 V, 15 V
Pulse Test
10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1521 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 50A 3PIN TO-3PL - Rail/Tube |
| 2SK1521(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1521-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1522 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 500V 50A 3PIN TO-3PL - Rail/Tube |
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