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參數(shù)資料
| 型號(hào)： | 2SK1518-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 84K |
| 代理商： | 2SK1518-E |
2SK1517, 2SK1518
Rev.2.00 Sep 07, 2005 page 4 of 6
1.0
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
0.8
0.2
0
80
120
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Temperature
–40
Pulse Test
VGS = 10 V
ID = 20 A
10 A
5 A
5
20
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
Forward Transfer Admittance
vs. Drain Current
0.2
1
2
0.5
0.2
0.1
0.05
0.5
1
2
5
10
–25
°C
TC = 25°C
75
°C
VDS = 20 V
Pulse Test
5,000
50
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
0.5
2,000
1,000
500
200
100
50
12
5
10
20
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
10,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
1,000
100
10
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
500
80
200
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
40
120
160
0
200
300
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
VDD = 100 V
250 V
400 V
VDD = 400 V
250 V
100 V
ID = 20 A
VDS
VGS
500
50
Drain Current ID (A)
Switching
Time
t
(ns)
0.5
Switching Characteristics
200
100
50
20
10
5
12
5
10
20
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
td (off)
tf
td (on)
tr
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK1519 | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 450V 30A 3-Pin(3+Tab) TO-3PL |
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| 2SK1520 | 制造商:Renesas Electronics Corporation 功能描述: |
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