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參數(shù)資料
| 型號： | 2SK1518-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 84K |
| 代理商： | 2SK1518-E |
2SK1517, 2SK1518
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
150
100
50
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
100
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
13
30
300
30
10
3
1
0.3
0.1
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(T
C =
25
°C)
PW
=
10
ms
(1
Shot)
Operation
in
this
a
rea
is
limited
by
R
D
S (on)
2SK1518
2SK1517
50
20
50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
40
10
30
40
0
20
30
Drain
Current
I
D
(A)
VGS = 4 V
Pulse Test
6 V
7 V
10 V
5 V
20
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
16
4
26
8
0
8
12
VDS = 20 V
Pulse Test
TC = – 25°C
75
°C
25
°C
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
412
16
0
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
ID = 5 A
20 A
10 A
5
100
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
1
Static Drain to Source on State
Resistance vs. Drain Current
2
1
0.5
0.2
0.1
0.05
2
5
10
20
50
Pulse Test
VGS = 10 V
15 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1519 | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 450V 30A 3-Pin(3+Tab) TO-3PL |
| 2SK1519-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK152 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:2SK152 |
| 2SK1520 | 制造商:Renesas Electronics Corporation 功能描述: |
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