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參數(shù)資料
| 型號(hào)： | 2SK1399 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK1399 |
Data Sheet D14770EJ2V0DS00
3
2SK1399
TYPICAL CHARACTERISTICS (TA = 25°C)
0
20
40
60
80
100
120 140
160
0
40
20
80
60
100
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tc - Case Temperature - C
dT
-
Derating
Factor
-
%
TA - Ambient Temperature - C
P
T
-
Total
Power
Dissipation
-
mW
0
120
30
60
90
150
210
180
240
50
100
150
200
250
300
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
mA
0.5
2
1
1.5
20
60
40
0
80
100
2.5 V
VGS = 4.5 V
4.0 V
Pulse measurement
TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
mA
78
56
34
01
2
100
10
1
0.1
0.01
VDS = 3.0 V
Pulse measurement
TA = 150C
75C
25C
–25C
150
2.0
1.5
1.0
0.5
50
100
0
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 3.0 V
ID = 1
A
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
20
50 100 200
500 1000
ID - Drain Current - mA
|y
fs
|
-
Forward
Transfer
Admittance
-
mS
100
200
500
1000
10
20
50
15
VDS = 5.0 V
f = 1 kHz
5
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| 2SK1468TP-FA | 4000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1468TP | 4000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1399-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1399-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R Tape & Reel |
| 2SK1400 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 300V 7A 3PIN TO-220AB - Rail/Tube |
| 2SK1400A | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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