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參數(shù)資料
| 型號(hào)： | 2SK1399 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK1399 |
Data Sheet D14770EJ2V0DS00
2
2SK1399
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS = 50 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS = ±7.0 V, VDS = 0 V±5.0
A
Gate Cut-off Voltage
VGS(off)
VDS = 3.0 V, ID = 1.0
A
0.9
1.2
1.5
V
Forward Transfer Admittance
| yfs |VDS = 3.0 V, ID = 10 mA
20
38
mS
Drain to Source On-state Resistance
RDS(on)1
VGS = 2.5 V, ID = 10 mA
22
40
RDS(on)2
VGS = 4.0 V, ID = 10 mA
14
20
Input Capacitance
Ciss
VDS = 3.0 V8
pF
Output Capacitance
Coss
VGS = 0 V7
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
3
pF
Turn-on Delay Time
td(on)
VDD = 3.0 V15
ns
Rise Time
tr
ID = 20 mA
100
ns
Turn-off Delay Time
td(off)
VGS(on) = 3.0 V30
ns
Fall Time
tf
RG = 10
, RL = 150
35
ns
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr
td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
5
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相關(guān)代理商/技術(shù)參數(shù) |
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