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參數(shù)資料
| 型號(hào)： | 2SK1337TZ-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | SC-43A, 3-PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | 2SK1337TZ-E |
2SK1337
Rev.2.00 Sep 07, 2005 page 4 of 6
10
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
8
2
0
80
120
0
4
6
Static Drain to Source on State
Resistance vs. Temperature
–40
Pulse Test
VGS = 10 V
ID = 0.5 A
0.2 A
0.1 A
0.2 A
0.1 A
0.5 A
VGS = 4 V
5
0.1
2
Drain Current ID (A)
1
0.1
0.05
0.2
1
0.02
0.5
0.2
0.05
0.5
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
2
VDS = 10 V
Pulse Test
25
°C
TC = –25°C
75
°C
500
0.1
2
Reverse Drain Current IDR (A)
200
10
0.05
0.2
1
0.02
50
100
5
0.5
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/
s, Ta = 25°C
VGS = 0
20
100
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
10
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
1,000
1
200
1.6
4.0
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
160
40
0.8
2.4
3.2
0
80
120
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
0
50 V
80 V
VDD = 25 V
VGS
VDS
VDD = 80 V
50 V
25 V
ID = 0.3 A
50
Drain Current ID (A)
Switching
Time
t
(ns)
20
0.5
5
10
0.02
1
Switching Characteristics
td (off)
0.05
0.2
0.5
0.1
1
2
tf
tr
td (on)
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 0.1%
2
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK1339 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 900V 3A 3PIN TO-P - Rail/Tube |
| 2SK1339(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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