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參數(shù)資料
| 型號： | 2SK1337TZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | SC-43A, 3-PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 2SK1337TZ-E |
2SK1337
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
0.3
A
Drain peak current
ID(pulse)
*1
1.2
A
Body to drain diode reverse drain current
IDR
0.3
A
Channel dissipation
Pch
400
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
100
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
50
A
VDS = 80 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
—
3.5
4.5
ID = 0.2 A, VGS = 10 V *
2
Static drain to source on state
resistance
RDS(on)
—
4.0
6.5
ID = 0.2 A, VGS = 4 V *
2
Forward transfer admittance
|yfs|
0.22
0.35
—
S
ID = 0.2 A, VDS = 10 V *
2
Input capacitance
Ciss
—
35
—
pF
Output capacitance
Coss
—
14
—
pF
Reverse transfer capacitance
Crss
—
3.5
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
2
—
ns
Rise time
tr
—
4
—
ns
Turn-off delay time
td(off)
—
17
—
ns
Fall time
tf
—
15
—
ns
ID = 0.2 A, VGS = 10 V,
RL = 150
Body to drain diode forward voltage
VDF
—
0.9
—
V
IF = 0.3 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
80
—
ns
IF = 0.3 A, VGS = 0,
diF/dt = 50 A/
s
Note:
2. Pulse test
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