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參數(shù)資料
| 型號： | 2SK1329 |
| 元件分類： | JFETs |
| 英文描述： | 0.6 ohm, POWER, FET |
| 封裝： | TO-3PFM, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 32K |
| 代理商： | 2SK1329 |
2SK1328, 2SK1329
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1328 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1329
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1328 I
DSS
—
250
A
V
DS = 360 V, VGS = 0
drain current
2SK1329
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1328 R
DS(on)
—
0.40
0.55
I
D = 6 A, VGS = 10 V *
1
on state resistance
2SK1329
—
0.45
0.60
Forward transfer admittance
|yfs|
6.0
10
—
S
I
D = 6 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1450
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
410
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
55
—
pF
Turn-on delay time
t
d(on)
—
20
—
ns
I
D = 6 A, VGS = 10 V,
Rise time
t
r
—
70
—
ns
R
L = 5
Turn-off delay time
t
d(off)
—
120
—
ns
Fall time
t
f
—60
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 12 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
450
—
ns
I
F = 12 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
See characteristic curves of 2SK1165, 2SK1166.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1329-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK133 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SK1330A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 8A I(D) | TO-247VAR |
| 2SK1331 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-247VAR |
| 2SK1332 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amp Applications |
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