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參數(shù)資料
| 型號： | 2SK1318 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SK1318 |
2SK1318
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
120
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±100μA, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±10
μA
V
GS
= ±16V, V
DS
= 0
V
DS
= 100V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V*
1
I
D
= 10A, V
GS
= 4V*
1
I
D
= 10A, V
DS
= 10V*
1
V
DS
= 10V, V
GS
= 0,
f = 1MHz
Zero gate voltege drain current
—
—
250
μA
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state
—
0.095
0.12
resistance
—
0.11
0.16
Forward transfer admittance
|y
fs
|
Ciss
10
17
\
S
Input capacitance
—
1300
\
pF
Output capacitance
Coss
—
430
—
pF
Reverse transfer capacitance
Crss
—
60
—
pF
Turn-on delay time
td (on)
—
14
—
ns
I
D
= 10A,
V
GS
= 10V, R
L
= 3
Rise time
tr
—
70
—
ns
Turn-off delay time
td (off)
—
210
—
ns
Fall time
tf
—
90
—
ns
Body–drain diode forward
voltage
V
DF
—
1.4
—
V
I
F
= 20A, V
GS
= 0
Body–drain diode reverse
recovery time
Note:
1. Pulse test
trr
—
280
—
ns
I
= 20A, V
= 0,
diF / dt = 50A / μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1318-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK1327L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-251VAR |
| 2SK1327S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-252VAR |
| 2SK1328 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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