參數(shù)資料
型號(hào): 2SK1332
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Junction Silicon FET for High-Frequency General-Purpose Amplifier Applications(高頻通用放大器應(yīng)用的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: N溝道場(chǎng)效應(yīng)晶體管的結(jié)硅高頻通用放大器應(yīng)用(高頻通用放大器應(yīng)用的?溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 102K
代理商: 2SK1332
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
2SK1332
Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN3137
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/6089MO, TS No.3137–1/4
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2058
[2SK1332]
Applications
· Ideal for use in variable resistors, analog switches,
low-frequency amplifiers, and constant-current
circuits.
Features
· Ultrasmall-sized package permitting 2SK1332-
applied sets to be made smaller and slimmer.
C
C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Drain
3 : Gate
SANYO : MCP
* : The 2SK1332 is classified by I
DSS
as follows (unit : mA) :
5
2
6
3
2
Continued on next page.
(Note) Marking : V
I
rank : 2, 3, 4
For CP package version, use the 2SK303.
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