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參數(shù)資料
| 型號(hào)： | 2SK1318-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 120 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK1318-E |
2SK1318
Rev.2.00 Sep 07, 2005 page 4 of 6
0.25
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
0.2
0.05
0
80
120
0
0.1
0.15
ID = 20 A
Pulse Test
10 A
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 4 V
VGS = 10 V
5 A
10 A
5 A
100
250
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
50
5
15
20
1
10
20
Forward Transfer Admittance
vs. Drain Current
Tc = –25
°C
VDS = 10 V
Pulse Test
0.5
2
10
25
°C
75
°C
500
120
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
200
20
0.5
2
10
5
50
100
di/dt = 50 A/
s
VGS = 0, Ta = 25°C
Pulse Test
0.2
10
5
Body to Drain Diode Reverse
Recovery Time
10,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF) 1,000
10
30
40
100
0
10
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
Typical Capacitance vs.
Drain to Source Voltage
200
40
100
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
160
40
20
60
80
0
80
120
VDS
20
16
4
0
8
12
VDD = 100 V
50 V
25 V
ID = 20 A
VGS
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
25 V
50 V
VDD = 100 V
500
120
Drain Current ID (A)
Switching
Time
t
(ns)
200
20
0.5
2
10
5
50
100
0.2
10
5
tf
td (on)
tr
VGS = 10 V, PW = 2 s
duty
1%, VDD
30 V
td (off)
=
.
Switching Characteristics
<
=
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK1327L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-251VAR |
| 2SK1327S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-252VAR |
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| 2SK1328-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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