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參數(shù)資料
| 型號： | 2SK1318-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 120 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 96K |
| 代理商： | 2SK1318-E |
2SK1318
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
60
40
20
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
100
10
1
0.1
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
30
3
0.3
1
3
30
300
Ta = 25
°C
100
s
1 ms
DC
Operation
(T
C =
25
°C)
PW
=
10
m
s (1
Shot)
Operation in this Area
Limited by R
DS (on)
Maximum Safe Operation Area
10
s
20
410
Drain to Source Voltage VDS (V)
16
4
26
8
Pulse Test
0
8
12
3 V
2.5 V
VGS = 2.0 V
4 V
10 V
Drain
Current
I
D
(A)
Typical Output Characteristics
20
25
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
16
4
13
4
–25
°C
0
8
12
VDS = 10 V
Pulse Test
75
°C
TC = 25°C
Typical Transfer Characteristics
5
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
4
1
412
16
0
2
3
10 A
ID = 20 A
Pulse Test
5 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1
250
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
0.5
0.02
15
20
0.5
0.1
0.2
0.05
0.01
10
10 V
VGS = 4 V
Pulse Test
Static Drain to Source on State
Resistance vs. Drain Current
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| 2SK1336-E | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2SK1338-E | 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1327L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-251VAR |
| 2SK1327S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-252VAR |
| 2SK1328 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1328-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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