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參數(shù)資料
| 型號(hào)： | 2SK1298-E |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-93, TO-3PFM, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK1298-E |
2SK1298
Rev.2.00 Sep 07, 2005 page 4 of 6
80
Case Temperature TC (°C)
120
40
0
0.01
0.02
0.03
0.04
0.05
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
ID = 50 A
Pulse Test
VGS = 4 V
VGS = 10 V
10 A, 20 A
50 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1.0
0.5
1.0
2
5
10
50
Drain Current ID (A)
20
Forward
Transfer
Admittance
y
fs
(S)
TC = 25°C
VDS = 10 V
Pulse Test
–25
°C
75
°C
500
200
100
50
20
10
5
0.5
1.0
5
50
Reverse Drain Current IDR (A)
10
2
20
Body to Drain Diode Reverse
Recovery Time
Reverse
Recovery
Time
t
rr
(ns)
di/dt = 50 A/
s, Ta = 25
°C
VGS = 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
100
10
Capacitance
C
(pF)
010
20
50
Drain to Source Voltage VDS (V)
30
40
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
040
120
160
Gate Charge Qg (nc)
80
20
16
12
8
4
Dynamic Input Characteristics
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
200
0
VDS
VGS
VDD = 10 V
25 V
ID = 40 A
50 V
VDD = 10 V
25 V
50 V
Switching Characteristics
1000
500
200
100
20
10
0.5
1.0
5
50
Drain Current ID (A)
10
2
20
Switching
Time
t
(ns)
50
td(off)
tf
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1 %
td(on)
tr
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| 2SK1299(L) | 0.45 ohm, POWER, FET |
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| 2SK1303 | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1299 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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| 2SK1299L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1299S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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