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參數(shù)資料
| 型號(hào)： | 2SK1298-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 40 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-93, TO-3PFM, 3 PIN |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK1298-E |
2SK1298
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
50
100
0
Case Temperature TC (°C)
150
20
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
40
60
Maximum Safe Operation Area
Drain
Current
I
D
(A)
100
10
3
1.0
0.3
500
100
50
20
2
0.1
200
10
5
1.0
0.5
30
Drain to Source Voltage VDS (V)
100
s
1 ms
PW
=
10
ms
(1
Shot)
Ta = 25
°C
10
s
Operation in this area
is limited by RDS (on)
DC
Operat
ion
(T
C =
25
°C)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
10
8
6
4
2
100
80
60
40
20
0
VGS = 2.5 V
Pulse Test
5 V
8 V
3 V
3.5 V
10 V
4.5 V
4 V
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
4
2
1
05
20
40
60
80
100
0
Drain
Current
I
D
(A)
75
°C
TC = 25°C
–25
°C
VDS = 10 V
Pulse Test
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
0.8
1.2
1.6
2.0
0
0.4
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
ID = 50 A
20 A
10 A
20
Drain Current ID (A)
50
10
5
200
0.02
0.05
0.1
0.2
0.5
2
0.01
0.005
100
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
VGS = 4 V
10 V
Pulse Test
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|---|---|
| 2SK1299(L) | 0.45 ohm, POWER, FET |
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| 2SK1303-E | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1299 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK12996 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
| 2SK1299L | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1299S | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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