參數(shù)資料
型號(hào): 2SK1285
元件分類: JFETs
英文描述: 3 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PAKAGE-3
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 412K
代理商: 2SK1285
Data Sheet D17113EJ2V0DS
2
2SK1285
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VGS = 10 V, ID = 2 A
0.26
0.32
Drain to Source On-state Resistance
RDS(on)
VGS = 4.0 V, ID = 2 A
0.32
0.40
Gate to Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 2 A
2.4
S
Drain Leakage Current
IDSS
VDS = 100 V, VGS = 0 V
10
A
Gate to Source Leakage Current
IGSS
VDS =
±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
500
pF
Output Capacitance
Coss
160
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
20
pF
Turn-on Delay Time
td(on)
40
ns
Rise Time
tr
55
ns
Turn-off Delay Time
td(off)
500
ns
Fall Time
tf
VGS(on) = 10 V
VDD = 50 V
ID = 2 A, RG = 10
RL = 15
120
ns
Total Gate Charge
QG
13
nC
Gate to Source Charge
QGS
3
nC
Gate to Drain Charge
QGD
VGS = 10 V
ID = 3 V
VDD = 80 V
2
nC
Diode Forward Voltage
VSD
ISD = 3 A, VGS = 0 V
0.9
V
Reverse Recovery Time
trr
140
ns
Reverse Recovery Charge
Qrr
IF = 3A, VGS = 0
di/dt = 50 A/
s
250
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1285-AZ 制造商:Renesas Electronics 功能描述:Bulk
2SK1286 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT POWER TRANSISTOR
2SK1286-AZ 制造商:Renesas Electronics 功能描述:Bulk
2SK1287 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SK1288 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE