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N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
2SK1285
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17113EJ2V0DS00 (2nd edition)
(Previous No. TC-2384)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark
shows major revised points.
1993
DESCRIPTION
The 2SK1285 is N-channel MOS Field Effect Transistor designed for
solenoid, motor and lamp driver.
FEATURES
Low on-state resistance
RDS(on) = 0.32
MAX. (VGS = 10 V, ID = 2 A)
RDS(on) = 0.40
MAX. (VGS = 4 V, ID = 2 A)
Low Ciss
Ciss = 500 pF TYP.
Built-in G-S gate protection diodes
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperatures
Storage Temperature
55 to +150
°C
Channel Temperature
150
°C MAX.
Maximum Power Dissipation
Total Power Dissipation (TA = 25
°C)
1.3
W
Total Power Dissipation (TC = 25
°C)
20
W
Maximum Voltages and Currents (TA = 25
°C)
VDSS
Drain to Source Voltage
100
V
VGSS(AC)
Gate to Source Voltage
±20
V
ID(DC)
Drain Current (DC)
±3.0
A
ID(pulse)
Note
Drain Current (pulse)
±12
A
Note PW
≤ 10
s, Duty Cycle ≤ 1%
PACKAGE DRAWING
(Unit: mm)
8.5 MAX.
3.2 ±0.2
12 TYP.
2.3 TYP.
1.2 TYP.
0.55
2.5
±0.2
12.0
MAX.
13.0
MIN.
2.8 MAX.
3.8
±0.2
0.8
+0.08
–0.05
+0.08
–0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
1. Source
2. Drain
3. Gate
4. Fin (Drain)