參數(shù)資料
型號: 2SK1170
元件分類: JFETs
英文描述: 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁數(shù): 7/11頁
文件大?。?/td> 64K
代理商: 2SK1170
2SK1169, 2SK1170
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1169 V
(BR)DSS
450
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1170
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1169 I
DSS
250
AV
DS = 360 V, VGS = 0
drain current
2SK1170
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1169 R
DS(on)
0.20
0.25
I
D = 10 A, VGS = 10 V *
1
on state resistance
2SK1170
0.22
0.27
Forward transfer admittance
|yfs|
10
16
S
I
D = 10 A, VDS = 10 V *
1
Input capacitance
Ciss
2800
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
780
pF
f = 1 MHz
Reverse transfer capacitance
Crss
90
pF
Turn-on delay time
t
d(on)
32
ns
I
D = 10 A, VGS = 10 V,
Rise time
t
r
115
ns
R
L = 3
Turn-off delay time
t
d(off)
200
ns
Fall time
t
f
—90
ns
Body to drain diode forward
voltage
V
DF
1.0
V
I
F = 20 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
500
ns
I
F = 20 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2SK117-GR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK117-Y N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK117-Y N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK117-GR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK118 6.5 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1170-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3P
2SK1171 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247
2SK1171-01 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247
2SK1172 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL SILICON POWER MOS-FET
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