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參數(shù)資料
| 型號(hào)： | 2SK118 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 6.5 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1B, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | 2SK118 |
2SK118
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK118
General Purpose and Impedance Converter and
Condenser Microphone Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
0.3
6.5
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.4
5.0
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.2
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
8.2
pF
Reverse transfer capacitance
Crss
VGD = 10 V, ID = 0, f = 1 MHz
2.6
pF
Noise figure
NF
VDS = 15 V, VGS = 0, RG = 100 kΩ,
f
= 120 Hz
0.5
5.0
dB
Note: IDSS classification R: 0.3~0.75 mA, O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
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| 2SK118-GR | 6.5 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK118-Y | 3 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK118_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
| 2SK1180 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:MOSFET |
| 2SK1181 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1183 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:MOSFET |
| 2SK1184 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:MOSFET |
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