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參數(shù)資料
| 型號： | 2SK1165-E |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 450 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 97K |
| 代理商： | 2SK1165-E |
2SK1165, 2SK1166
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
120
80
40
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
100
10
1.0
0.1
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
30
3
0.3
1
3
30
300
Ta = 25
°C
2SK1166
2SK1165
10
s
100
s
1 ms
DC
Operatio
n (T
C =
25
°C)
PW
=
10
ms
(1
shot)
Operation
in
this
Area
is Limited
by
R
DS(on)
20
50
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
16
4
10
30
40
0
8
12
5.0 V
4.5 V
VGS = 4 V
5.5 V
6 V
10 V
8 V
20
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
16
4
26
8
–25
°C
0
8
12
VDS = 20 V
Pulse Test
75
°C
TC = 25°C
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
412
16
0
4
6
ID = 5 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10 A
Pulse Test
15 A
5
250
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2
0.1
1.0
5
20
0.5
1.0
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 10 V
Pulse Test
15 V
0.2
0.05
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1166-E | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1170 | 0.27 ohm, POWER, FET |
| 2SK1190 | POWER, FET, TO-220AB |
| 2SK3460 | POWER, FET, TO-220AB |
| 2SJ425 | POWER, FET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1166 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1166(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1166-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1167 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 15A 3PIN TO-3P - Rail/Tube |
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