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參數(shù)資料
| 型號： | 2SK1165-E |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 450 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 97K |
| 代理商： | 2SK1165-E |
2SK1165, 2SK1166
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK1165
450
Drain to source voltage
2SK1166
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
12
A
Drain peak current
ID(pulse)*
1
48
A
Body to drain diode reverse drain current
IDR
12
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1165
450
Drain to source
breakdown voltage
2SK1166
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
2SK1165
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1166
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
2SK1165
—
0.40
0.55
Static drain to source on
state resistance
2SK1166
RDS(on)
—
0.45
0.60
ID = 6 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
6.0
10
—
S
ID = 6 A, VDS = 10 V *
3
Input capacitance
Ciss
—
1450
—
pF
Output capacitance
Coss
—
410
—
pF
Reverse transfer capacitance
Crss
—
55
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
20
—
ns
Rise time
tr
—
70
—
ns
Turn-off delay time
td(off)
—
120
—
ns
Fall time
tf
—
60
—
ns
ID = 6 A, VGS = 10 V,
RL = 5
Body to drain diode forward voltage
VDF
—
1.0
—
V
IF = 12 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
450
—
ns
IF = 12 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
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PDF描述 |
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| 2SK1166-E | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1170 | 0.27 ohm, POWER, FET |
| 2SK1190 | POWER, FET, TO-220AB |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1166 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1166(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1166-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1167 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 15A 3PIN TO-3P - Rail/Tube |
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