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參數(shù)資料
| 型號(hào)： | 2SK1163 |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SK1163 |
2SK1163, 2SK1164
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1163 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1164
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1163 I
DSS
—
250
AV
DS = 360 V, VGS = 0
drain current
2SK1164
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1163 R
DS(on)
—
0.55
0.7
I
D = 5 A, VGS = 10 V *
1
on state resistance
2SK1164
—
0.60
0.8
Forward transfer admittance
|yfs|
5.0
8.0
—
S
I
D = 5 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1150
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
340
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
55
—
pF
Turn-on delay time
t
d(on)
—
17
—
ns
I
D = 5 A, VGS = 10 V,
Rise time
t
r
—
60
—
ns
R
L = 6
Turn-off delay time
t
d(off)
—95
—
ns
Fall time
t
f
—50
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 11 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
400
—
ns
I
F = 11 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
See characteristic curves of 2SK1159, 2SK1160.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1164-E | 11 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1163-E | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1165 | 0.55 ohm, POWER, FET |
| 2SK1166 | 0.6 ohm, POWER, FET |
| 2SK1167-E | 15 A, 450 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1164 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1165 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1165(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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