參數(shù)資料
型號: 2SK1161
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 3/5頁
文件大?。?/td> 30K
代理商: 2SK1161
2SK1161, 2SK1162
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
2SK1161 V
(BR)DSS
450
V
I
D
= 10 mA, V
GS
= 0
2SK1162
500
Gate to source breakdown
voltage
V
(BR)GSS
±
30
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
250
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
Zero gate voltage
drain current
2SK1161 I
DSS
2SK1162
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V *
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
Static Drain to source
on state resistance
2SK1161 R
DS(on)
0.6
0.8
1
2SK1162
0.7
0.9
Forward transfer admittance
|yfs|
4.0
7.0
S
I
D
= 5 A, V
DS
= 10 V *
V
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
1050
pF
Output capacitance
Coss
280
pF
Reverse transfer capacitance
Crss
40
pF
Turn-on delay time
t
d(on)
15
ns
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Rise time
t
r
t
d(off)
t
f
V
DF
60
ns
Turn-off delay time
90
ns
Fall time
45
ns
Body to drain diode forward
voltage
1.0
V
I
F
= 10 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
350
ns
I
F
= 10 A, V
= 0,
di
F
/dt = 100 A/
μ
s
See characteristic curves of 2SK1157, 2SK1158.
相關(guān)PDF資料
PDF描述
2SK1162 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1163 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1164 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1165 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1166 Silicon N-Channel MOS FET(N溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1161(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1161-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1162 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 500V 10A 3PIN TO-3P - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK1162-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-3P